dn2530 features high input impedance low input capacitance fast switching speeds low on resistance free from secondary breakdown low input and output leakage applications normally-on switches solid state relays converters linear ampli? ers constant current sources power supply circuits telecom ? ? ? ? ? ? ? ? ? ? ? ? ? general description the dn2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. absolute maximum ratings parameter value drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c soldering temperature* 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. *distance of 1.6mm from case for 10 seconds. ordering information bv dsx / bv dgx r ds(on) (max) i dss (min) package options to-243aa 1 to-92 300v 12 200ma dn2530n8 dn2530n3 DN2530N8-G dn2530n3-g -g indicates package is rohs compliant (green) 1 same as sot-89. products shipped on 2000 piece carrier tape reels. n-channel depletion-mode vertical dmos fets pin con? gurations to-243aa (top view) g d s d d g s to-92 (front view)
2 dn2530 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v electrical characteristics symbol parameter min typ max units conditions bv dsx drain-to-source breakdown voltage 300 - - v v gs = -5.0v, i d = 100a v gs(off) gate-to-source off voltage -1.0 - -3.5 v v ds = 25v, i d = 10a v gs(off) change in v gs(off) with temperature - - 4.5 mv/ o cv ds = 25v, i d = 10a i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current - - 10 a v ds = max rating, v gs = -10v - - 1.0 ma v ds = 0.8 max rating, v gs = -10v, t a = 125 o c i dss saturated drain-to-source current 200 - - ma v gs = 0v, v ds = 25v r ds(on) static drain-to-source on-state resistance --12v gs = 0v, i d = 150ma r ds(on) change in r ds(on) with temperature - - 1.1 %/ o cv gs = 0v, i d = 150ma g fs forward transconductance 300 - - mmho v ds = 10v, i d = 150ma c iss input capacitance - - 300 pf v gs = -10v, v ds = 25v, f = 1mhz c oss common source output capacitance - - 30 c rss reverse transfer capacitance - - 5 t d(on) turn-on delay time - - 10 ns v dd = 25v, i d = 150ma, r gen = 25?, t r rise time - - 15 t d(off) turn-off delay time - - 15 t f fall time - - 20 v sd diode forward voltage drop - - 1.8 v v gs = -10v, i sd = 150ma t rr reverse recovery time - 800 - ns v gs = -10v, i sd = 1.0a notes: 1.all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2.all a.c. parameters sample tested. thermal characteristics package i d (continuous) 1 i d (pulsed) power dissipation @t a = 25 o c jc ( o c/w) ja ( o c/w) i dr 1 i drm to-243aa 200ma 500ma 1.6w 2 15 78 2 200ma 500ma to-92 175ma 500ma 0.74w 125 170 175ma 500ma notes: 1. i d (continuous) is limited by max rated t j . 2. mounted on fr4 board, 25mm x 25mm x 1.57mm switching waveforms and test circuit
3 dn2530 typical performance curves output characteristics 1.0 0.8 0.6 0.4 0.2 0 050 100 150 200 250 v ds (volts) i d (amperes) transconductance vs. drain current i d (amperes) power dissipation vs. case temperature 0 150 100 50 125 75 25 to-92 to-243aa v gs = 1.0v 0.5v -0.5v -1.0v -1.5v 0v saturation characteristics 0.25 0.2 0.15 0.1 0.05 0 2.0 1.6 1.2 0.8 0.4 0 0123 5 4 v gs = 1.0v -1.5v 0.5v 0v -0.5v -1.0v maximum rated safe operating area 1 1000 100 10 1 0.1 0.01 0.001 v ds (volts) i d (amperes) to-92 (pulsed) t c = 25 c to-92 (dc) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 t p (seconds) 0 to-243aa t a = 25 c p d = 1.6w 0.5 0.4 0.3 0.2 0.1 0 0 0.25 0.05 0.1 0.15 0.2 v ds = 10v t a = -55 c t a = 25 c t a = 125 c to-92 t c = 25 c p d = 1.0w i d (amperes) v ds (volts) g fs (siemens) t c ( c) p d (watts)
4 dn2530 typical performance curves (cont.) bv dss variation with temperature bv dss (normalized) 1.1 1.05 1.0 0.95 0.9 0.85 -50 0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 transfer characteristics t j (c) v gs (volts) v ds (volts) i d (amperes) 1.0 0.8 0.6 0.4 0.2 0 -2 -1 0 12 capacitance vs. drain-to-source voltage c (picofarads) 200 150 100 50 0 010 20 30 40 v gs = -5v i d = 100ma v gs = 0v v ds = 10v v gs = -10v c oss c rss c iss t a = -55c t a = 25c r ds (on) @ i d = 150ma v gs(off) @ 10ma v ds = 40v t a = 125c on-resistance vs. drain current 50 40 30 20 10 0 i d (amps) q c (nanocoulombs) r ds(on) (ohms) -50 0 50 100 150 012345 v gs (off) and r ds variation with temperature 2.5 2 1.5 1 0.5 0 15 10 5 0 -5 t j (c) v gs(th) (normalized) gate drive dynamic characteristics v gs (volts) v ds = 20v 250pf 152pf
5 dn2530 3-lead to-92 package outline (n3) 1 2 3 seating plane 1 2 3 front view 0.175 - 0.205 0.170 - 0.210 0.500 min 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 0.125 - 0.165 0.135 min 0.080 - 0.105 0.014 - 0.022 side view top view notes: all dimensions are in millimeters; all angles in degrees.
6 doc.# dsfp-dn2530 a012307 dn2530 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) exclusion zone no vias/traces in this area. shape of pad may vary. 3.00 bsc 1.50 bsc 0.5 0.06 0.42 0.06 1.05 0.15 2.45 0.15 4.10 0.15 1.72 0.10 4.50 0.10 2.21 0.08 0.40 0.05 1.50 0.10 notes: all dimensions are in millimeters; all angles in degrees. top view side view bottom view 3-lead to-243aa (sot-89) surface mount package (n8)
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